AFM04P2-000 mesfet equivalent, power gaas mesfet.
I 21 dBm Output Power @ 18 GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency, 25% I Broadband Operation, DC
–40 GHz I 0.25 µm Ti/Pd/A.
in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged,.
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